Friday, April 10, 2009

Subscribe to RSS Add to Technorati Faves Digg This Page Send to Stumble Upon Bookmark on Delicious 200 Gbps silicon photonic integrated chip


To enable high speed testing, the silicon chip is bonded to a printed circuit board (PCB) with low loss RF connectors. The PCB is also designed for DC bias control of MZMs and MUX/DEMUX phase tuning (see Fig. 2). In the high-speed testing, the differential RF signals from a pseudo-random bit sequence (PRBS) generator with [231-1] pattern length are amplified using a commercially available dual-output driver. The amplified single-ended output of 3.2 Vpp (6.4 Vpp differential) is combined with 2VDC using a bias Tee to ensure reverse bias operation for the entire AC voltage swing. The MZI modulators are biased at quadrature for all the high-speed measurements.

Before RF characterization, we tested the optical spectra of the integrated chip. We obtained relatively good channel uniformity (<1.5>25 dB). For the data transmission experiment, we measured the eye diagram one channel at a time. Figure 3 shows the 25 Gbps eye diagrams of all eight channels. We see from Fig. 3 that all channels show similar performance. Clear open eyes at 25 Gbps suggest that the single chip is capable of transmitting data at an aggregate bandwidth of 200 Gbps.

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